Published April 8, 1991
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Journal Article
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Field-induced resonant tunneling between parallel two-dimensional electron systems
- Creators
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Eisenstein, J. P.
- Pfeiffer, L. N.
- West, K. W.
Chicago
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Abstract
Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.
Additional Information
Copyright © 1991 American Institute of Physics (Received 6 December 1990; accepted 1 February 1991) It is a pleasure to thank T. J. Gramila, H. L. Stormer, and F. Capasso for useful discussions.Files
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