Interband transitions in InxGa1-xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy
Abstract
Room-temperature phototransmittance and electrotransmittance of single quantum wells of InxGa1-xAs with In0.52Al0.48As barriers have been used to study the excitonic interband transitions between the confined conduction- and valence-band states. Peak assignment has been confirmed by photocurrent spectroscopy. The lattice-matched (x=0.53) and strained (x=0.6) structures were considered for two different well widths of 50 and 250 Å. Transition energies and broadening parameters were measured from the spectra of the wide well samples and studied as a function of the principal quantum number. Reasonably good agreement between theory and experiment has been achieved by using published values of the electronic band-structure parameters. An observed monotonic increase of the linewidth with the quantum number has been associated with the presence of well-width fluctuations due to rough interfaces.
Additional Information
© 1993 The American Physical Society. Received 22 November 1991; revised manuscript received 9 November 1992. The present work was supported by the European Economic Communities Basic Research Program No. ESPRIT 3086. One of us (A.D.) wishes to thank Professor Fred H. Pollak, Professor G. Guillot, Dr. O. J. Glembocki, and Dr. P. Lefebvre for useful discussions.Attached Files
Published - DIMprb93.pdf
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Additional details
- Eprint ID
- 4644
- Resolver ID
- CaltechAUTHORS:DIMprb93
- European Economic Communities Basic Research Program
- ESPRIT 3086
- Created
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2006-08-31Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field