A DLTS study of deep levels in n-type CdTe
- Creators
- Collins, R. T.
- Kuech, T. F.
- McGill, T. C.
Abstract
We report the results of a DLTS study on the majority carrier deep level structure of three samples of n-type CdTe and the effects on the deep level structure of indium doped CdTe due to H2 annealing. H2 annealing did not qualitatively change the deep level structure of the annealed sample. It did cause the shallow level concentration to decrease with a proportional decrease in the deep level concentrations as a result of indium out-diffusion and compensation by native defects. Levels present in all of the materials studied have been characterized and attributed to either native defects or innate chemical impurities. Other levels present in indium doped material require above band gap illumination of the sample before they are observed. A possible model proposes that these levels arise from defect complexes.
Additional Information
© 1982 American Vacuum Society. Received 13 November 1981; accepted 11 February 1982. We wish to acknowledge Marti Mäenpää for his help with these experiments, Dr. J.O. McCaldin for valuable discussions, and Rockwell International for providing some of the samples. This work was supported in part by the Army Research Office under Contract No. DAAG29-80-C-0103. One of us (TFK) wishes to acknowledge the Office of Naval Research (Contract N00014-76-C-1068) for support during this work.Attached Files
Published - COLjvst82.pdf
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Additional details
- Eprint ID
- 11787
- Resolver ID
- CaltechAUTHORS:COLjvst82
- Army Research Office
- DAAG29-80-C-0103
- Office of Naval Research
- N00014-76-C-1068
- Created
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2008-09-29Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field