Experimental observation of negative differential resistance from an InAs/GaSb interface

Creators: Collins, D. A.; Yu, E. T.; Rajakarunanayake, Y.; Söderström, J. R.; Ting, D. Z.-Y.; Chow, D. H.; McGill, T. C.

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Abstract

We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×10^4 A/cm^2 and 4.2×10^4 A/cm^2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.

Additional Information

© 1990 American Institute of Physics. Received 23 March 1990; accepted 5 June 1990. The authors would like to thank P.C. Sercel and M.K. Jackson for helpful discussions. This work was supported in part by the Office of Naval Research under contract No. N00014-89-J-1141.

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