Published June 1, 2006
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W-band waveguide-packaged InP HEMT reflection grid amplifier
Chicago
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Abstract
This letter presents a 79-GHz broadband reflection-type grid amplifier using spatial power combining to combine the power of 64 unit cells. Each unit cell uses a two-stage cascade configuration with InP HEMTs arranged as a differential pair. A broadband orthogonal mode transducer (OMT) separates two orthogonally polarized input and output signals over a 75 to 85GHz range. In conjunction with the OMT, a mode converter with quadruple-ridged apertures was designed to enhance the field uniformity over the active grid. Measurements show 5-dB small signal gain at 79GHz and an 800-MHz 3-dB bandwidth. The amplifier generates an output power of 264mW with little evidence of saturation.
Additional Information
© Copyright 2006 IEEE. Reprinted with permission. Manuscript received November 14, 2005; revised February 27, 2006. [Posted online: 2006-05-30] This work was supported by the Lee Center for Advanced Networking at California Institute of Technology. The authors would like to thank Dr. J. Kuno and J. Ma, Quinstar technology Inc., for their generous help with the large-signal measurement, R. Tsai, Northrop Grumman, for fabrication of the grid chips, and Dr. S. Weinreb, Jet Propulsion Laboratory, for his helpful discussions.Files
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2006-06-25Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field