Published October 15, 1974
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Journal Article
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Identification of the dominant diffusing species in silicide formation
Chicago
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Abstract
Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si.
Additional Information
©1974 American Institute of Physics. Received 24 May 1974. Work supported in part by Office of Naval Research (L. Cooper). Work supported in part by ARPA Contract administered by AFCRL.Files
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