Published September 1, 1983
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Journal Article
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Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions
Chicago
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Abstract
A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
Additional Information
© Copyright 1983 IEEE. Reprinted with permission. Manuscript received December 16, 1982; revised April 5, 1983. This work was supported by the U.S. Office of Naval Research and the National Science Foundation.Files
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