Published January 1, 1984
| Published
Journal Article
Open
Graded collector heterojunction bipolar transistor
- Creators
- Chiu, L. C.
- Harder, Ch.
- Margalit, S.
- Yariv, A.
Chicago
Abstract
A graded collector heterojunction bipolar transistor is proposed. The graded collector improves device speed performance at high current densities by reducing the influence of the Kirk effect.
Additional Information
© 1984 American Institute of Physics. Received 6 September 1983; accepted 14 October 1983. This work is supported by the National Science Foundation and the Office of Naval Research.Attached Files
Published - CHIapl84.pdf
Files
CHIapl84.pdf
Files
(161.0 kB)
Name | Size | Download all |
---|---|---|
md5:e39bb0340716c5a7d1a684eb812b5be4
|
161.0 kB | Preview Download |
Additional details
- Eprint ID
- 11933
- Resolver ID
- CaltechAUTHORS:CHIapl84
- National Science Foundation
- Office of Naval Research
- Created
-
2008-10-17Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field