Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published November 1, 1982 | public
Journal Article Open

Mode stabilized terrace InGaAsP lasers on semi-insulating InP

Abstract

Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices.

Additional Information

Copyright © 1982 American Institute of Physics. Received 26 April 1982; accepted 2 August 1982. This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program).

Files

CHEjap82.pdf
Files (414.4 kB)
Name Size Download all
md5:936f77774a46c7781b1ecba919be89fc
414.4 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 16, 2023