Published November 1, 1982
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Mode stabilized terrace InGaAsP lasers on semi-insulating InP
Abstract
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices.
Additional Information
Copyright © 1982 American Institute of Physics. Received 26 April 1982; accepted 2 August 1982. This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program).Files
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