Published August 1991
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Journal Article
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Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers
Chicago
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Abstract
The authors report on the design, fabrication, and characterization of high-power strained-layer (SL) InGaAs single-quantum-well (SQW) lasers. The lasers emit a 0.980 µm. They deliver over 100 mW CW optical power at room temperature in a stable single lateral mode. The maximum CW output power measured is 265 mW. The lasers have been successfully used as pump sources for an erbium-doped fiber amplifier.
Additional Information
© Copyright 1991 IEEE. Reprinted with permission. Manuscript received April 22, 1991. This work was supported by Defense Advanced Research Projects Agency (DARPA) and the Office of Naval Research (ONR).Files
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