Published May 1, 1983
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Journal Article
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Very low threshold InGaAsP mesa laser
Abstract
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.
Additional Information
© Copyright 1983 IEEE. Reprinted with permission. Manuscript received September 7, 1982; revised November 19, 1982. This work was supported by the National Science Foundation, the U.S. Office of Naval Research, and the U.S. Air Force Office of Scientific Research.Files
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