Published February 16, 1995
| Published
Journal Article
Open
Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers
- Creators
- Chen, T. R.
-
Zhao, B.
- Eng, L.
- Feng, J.
- Zhuang, Y. H.
- Yariv, A.
Chicago
An error occurred while generating the citation.
Abstract
Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings.
Additional Information
© IEE 1995. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Office of Naval Research, ARPA, and the Air Force Office of Scientific Research.Attached Files
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Additional details
- Eprint ID
- 748
- Resolver ID
- CaltechAUTHORS:CHEel95
- Office of Naval Research (ONR)
- Advanced Research Projects Agency (ARPA)
- Air Force Office of Scientific Research (AFOSR)
- Created
-
2005-09-27Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field