Published October 8, 1992
| Published
Journal Article
Open
Modulation Bandwidth Enhancement in Single Quantum Well GaAs/AlGaAs Lasers
- Creators
- Chen, T. R.
-
Zhao, B.
- Yamada, Y.
- Zhuang, Y. H.
- Yariv, A.
Abstract
The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3dB bandwidth in excess of 9 GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the device parameters.
Additional Information
© 1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Office of Naval Research, the Defense Advanced Research Project Agency and Air Force Office of Scientific Research.Attached Files
Published - CHEel92.pdf
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Additional details
- Eprint ID
- 473
- Resolver ID
- CaltechAUTHORS:CHEel92
- Office of Naval Research (ONR)
- Defense Advanced Research Projects Agency (DARPA)
- Air Force Office of Scientific Research (AFOSR)
- Created
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2005-06-22Created from EPrint's datestamp field
- Updated
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2020-03-09Created from EPrint's last_modified field