Published January 9, 1989
| public
Journal Article
Open
Double active region index-guided semiconductor laser
- Creators
- Chen, T. R.
- Kajanto, M.
- Zhuang, Yuhua
- Yariv, A.
Chicago
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Abstract
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
Additional Information
Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper).Files
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Additional details
- Eprint ID
- 9895
- Resolver ID
- CaltechAUTHORS:CHEapl89
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2008-03-26Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field