Published January 9, 1989
| public
Journal Article
Open
Double active region index-guided semiconductor laser
- Creators
- Chen, T. R.
- Kajanto, M.
- Zhuang, Yuhua
- Yariv, A.
Abstract
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
Additional Information
Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper).Files
CHEapl89.pdf
Files
(422.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:df5531eebebfd39cef33aa1195b30ea9
|
422.3 kB | Preview Download |
Additional details
- Eprint ID
- 9895
- Resolver ID
- CaltechAUTHORS:CHEapl89
- Created
-
2008-03-26Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field