Published December 15, 1982
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Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate
Chicago
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Abstract
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained.
Additional Information
Copyright © 1982 American Institute of Physics. Received 10 August 1982; accepted 29 September 1982. This work was supported by the National Science Foundation, the Office of Naval Research, and the Air Force Office of Scientific Research. The authors are thankful to Dr. P.C. Chen for the invaluable discussion regarding the mass transport process.Files
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