Published August 1, 1982
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High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization
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Abstract
The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single-mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles.
Additional Information
Copyright © 1982 American Institute of Physics. Received March 1982; accepted for publication 14 May 1982. This work was supported by the Office of Naval Research and the National Science Foundation.Files
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