Ohmic contacts to n-type GaAs
- Creators
- Boudville, W. J.
- McGill, T. C.
Abstract
We present a model of the metal–semiconductor junction, for heavily doped GaAs, so that tunneling dominates the current. It is assumed that the imaginary part of the wave vector in the semiconductor is given by the two-band model. Modifications in the barrier potential due to image charge, negative charge near the interface, and the degenerate doping of the semiconductor are included. The role of the L-point minimum in the GaAs in determining the position of the Fermi level in the semiconductor is included. The energy distribution of the conductance as a function of doping and barrier height is given. The contact resistance as a function of doping and barrier height is also presented. The results suggest that previous calculations are substantially in error due to the simple models that were used for the dependence of the imaginary part of the wave vector on energy.
Additional Information
© 1985 American Vacuum Society (Received 24 April 1985; accepted 25 April 1985) We would like to acknowledge the support of the Office of Naval Research under Contract No. N00014-82-K-0556. We would also like to thank A. Zur and G. Y. Wu for their advice. One of us (WJB) is the recipient of a Hackett Studentship from the University of Western Australia.Files
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Additional details
- Eprint ID
- 2707
- Resolver ID
- CaltechAUTHORS:BOUjvstb85
- Created
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2006-04-21Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field