Beyond the Rayleigh scattering limit in high-Q silicon microdisks: theory and experiment
Abstract
Using a combination of resist reflow to form a highly circular etch mask pattern and a low-damage plasma dry etch, high-quality-factor silicon optical microdisk resonators are fabricated out of silicon-on-insulator (SOI) wafers. Quality factors as high as Q = 5×10^6 are measured in these microresonators, corresponding to a propagation loss coefficient as small as α ~ 0.1 dB/cm. The different optical loss mechanisms are identified through a study of the total optical loss, mode coupling, and thermally-induced optical bistability as a function of microdisk radius (5-30 µm). These measurements indicate that optical loss in these high-Q microresonators is limited not by surface roughness, but rather by surface state absorption and bulk free-carrier absorption.
Additional Information
© 2005 Optical Society of America Original Manuscript: February 2, 2005; Revised Manusctipt: January 31, 2005; Published: March 7, 2005 This work was supported by DARPA through the EPIC program, and by the Charles Lee Powell Foundation. The authors would like to thank Paul Barclay and Kartik Srinivasan for useful discussions. M.B. thanks the Moore Foundation, NPSC, and HRL Laboratories, and T.J. thanks the Powell Foundation for their graduate fellowship support.Attached Files
Published - BORoe05.pdf
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Additional details
- Eprint ID
- 1760
- Resolver ID
- CaltechAUTHORS:BORoe05
- Defense Advanced Research Projects Agency (DARPA)
- Charles Lee Powell Foundation
- Gordon and Betty Moore Foundation
- National Physical Science Consortium
- Hughes Research Laboratories
- Created
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2006-02-16Created from EPrint's datestamp field
- Updated
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2019-10-02Created from EPrint's last_modified field