XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
- Creators
- Beach, R. A.
- Piquette, E. C.
- McGill, T. C.
Abstract
The incorporation of oxygen onto the (3x3) reconstructed surface of GaN(0001) has been studied using X-ray Photoelectron Spectroscopy (XPS). It was found that the (3x3) reconstruction corresponds to a fractional Ga adlayer atop a Ga terminated GaN surface. Our measurements indicate a surface coverage of 1.15 ± 0.2 monolayers of relaxed Ga on the surface. The binding energy separation between the relaxed surface Ga3d core level and bulk Ga3d level was measured to be 1.1 ± 0.1 eV. A metallic component extending from the bulk GaN valence band maximum out to 0 eV was also present in the XPS spectrum. The separation between the bulk valence band maximum and the Fermi level of the metallic component was found to be 2.1 ± 0.1 eV. The relaxation of the surface Ga was found to decrease with oxygen exposure indicating Ga-O bonding, with oxygen adsorption terminating at 1.3 ± 0.2 monolayers. The O1s core level was found to have a FWHM of 2.0 ± 0.1 eV.
Additional Information
© 1999 The Materials Research Society. This work was supported by DARPA and monitored by the ONR under Grant N00014-92-J-1845. This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4. http://nsr.mij.mrs.org/4S1/Files
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Additional details
- Eprint ID
- 9317
- Resolver ID
- CaltechAUTHORS:BEAmrsijnsr99
- Created
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2007-12-12Created from EPrint's datestamp field
- Updated
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2019-10-02Created from EPrint's last_modified field