Published September 1983
| Published
Journal Article
Open
Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>
- Creators
- Bartur, M.
- Nicolet, M-A.
Chicago
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Abstract
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transport through a silicide layer on a substrate during thermal oxidation at 700–900 °C. The SiO2 growth from PdSi, Pd2Si, CoSi2, and NiSi2 films on is a process limited by the diffusion of the oxidant from the ambient gas to the silicide/oxide interface. Possible diffusion processes through the silicide that supply Si to the growing SiO2 layer, but keep the silicide stoichiometry intact, are discussed. Backscattering spectrometry is used to monitor the marker position in the silicide layer. We find that the diffusing species during oxidation correlate with the moving species during silicide formation.
Additional Information
Copyright © 1983 American Institute of Physics. Received 22 November 1982; accepted 9 March 1983. The authors wish to thank the reviewer for very constructive criticism of the manuscript, Dr. K.N. Tu of IBM, Yorktown Heights, for his comments, and R. Gorris and R. Fernandez (Caltech) for technical assistance. The work was executed under the UR Fund of the Böhmische Physical Society (B.M. Ullrich), and was partially supported by Solid-State Devices, Inc. (A. Applebaum, President).Attached Files
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Additional details
- Eprint ID
- 11896
- Resolver ID
- CaltechAUTHORS:BARjap83
- UR Fund of the Böhmische Physical Society
- Solid-State Devices, Inc.
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2008-10-09Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field