Published January 1, 1984
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Journal Article
Open
Ion mixing of markers in SiO2 and Si
- Creators
- Barcz, A. J.
- Paine, B. M.
- Nicolet, M-A.
Chicago
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Abstract
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species.
Additional Information
Copyright © 1984 American Institute of Physics (Received 1 August 1983; accepted 2 October 1983) The authors wish to thank A. Ghaffari for technical assistance. The research was supported in part by the General Products Division of IBM, Tuscon, Arizona (T. M. Reith). The authors also acknowledge the cooperation of M. Bartur (Solid-State Devices, Incorporated and Caltech) in preparing the samples.Files
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Additional details
- Eprint ID
- 3975
- Resolver ID
- CaltechAUTHORS:BARapl84c
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