Published May 15, 1984
| public
Journal Article
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Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode
- Creators
- Bar-Chaim, N.
- Lau, K. Y.
- Ury, I.
- Yariv, A.
Abstract
A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.
Additional Information
Copyright © 1984 American Institute of Physics (Received 9 January 1984; accepted 27 February 1984) This research was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory.Files
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- 3977
- Resolver ID
- CaltechAUTHORS:BARapl84b
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2006-07-20Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field