Published April 1, 1982
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Journal Article
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Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor
Abstract
A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 µm) at collector current levels of 15 mA were obtained.
Additional Information
Copyright © 1982 American Institute of Physics. (Received 23 November 1981; accepted for publication 4 January 1982) This work was supported by the Defense Advanced Research Projects Agency.Files
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