Published November 15, 1981
| public
Journal Article
Open
Electrical characteristics of Al contact to NiSi using thin W layer as a barrier
- Creators
- Bartur, M.
- Nicolet, M-A.
Chicago
An error occurred while generating the citation.
Abstract
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to can be removed by introducing a very thin (~250 Å) tungsten film between the Al and the NiSi layers. This structure can be formed by sequential evaporation of Ni, W, and Al and subsequent thermal annealing to form NiSi. Schottky barrier measurements show that the contact is thermally stable at 450 °C up to about 1-h annealing with very little change in the electronic barrier height. A model, derived from the electrical measurements, is proposed for the failure mode of the tungsten barrier after excessive annealing.
Additional Information
Copyright © 1981 American Institute of Physics. (Received 20 July 1981 accepted for publication 4 September 1981) The authors wish to thank R. Gorris and R. Fernandez for technical assistance. The work was financially in part by the U.S. Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and and M.B. Chamberlain), and by Solid State Devices, Inc. (A. Applebaum, President).Files
BARapl81.pdf
Files
(284.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:c6d61d0059e89e5880f523435fea1745
|
284.7 kB | Preview Download |
Additional details
- Eprint ID
- 10606
- Resolver ID
- CaltechAUTHORS:BARapl81
- Created
-
2008-05-21Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field