Published February 15, 1980
| public
Journal Article
Open
Be-implanted (GaAl)As stripe geometry lasers
Abstract
GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%.
Additional Information
Copyright © 1980 American Institute of Physics. (Received 27 September 1979; accepted for publication 28 November 1979) The authors would like to thank Pat Koen of the California Institute of Technology for the SEM photomicrograph. This work was supported by the Office of Naval Research and the National Science Foundation.Files
BARapl80.pdf
Files
(246.2 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:7b7b73517e15eba50b53f54184522396
|
246.2 kB | Preview Download |
Additional details
- Eprint ID
- 10605
- Resolver ID
- CaltechAUTHORS:BARapl80
- Created
-
2008-05-21Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field