Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures
- Creators
- Bai, G.
- Nicolet, M.-A.
Abstract
The damage in epitaxial CoSi2 films 500 nm thick grown on Si(111) produced by room-temperature implantation of 150 keV 28Si were investigated by 2-MeV 4He channeling spectrometry, double-crystal x-ray diffractometry, and electrical resistivity measurements. The damage in the films can be categorized into two types. In lightly (heavily) damaged CoSi2 the damage is in the form of point-like (extended) defects. The resistivity of lightly damaged CoSi2 films rises with the dose of implantation. Electrical defects correlate well with structural ones in lightly damaged films. The resistivity of heavily damaged films flattens off while the structural defects continue to rise with the dose, so that resistivity no longer correlates with structural defects. Upon thermal annealing, lightly damaged films can fully recover structurally and electrically, whereas heavily damaged films do so only electrically. A residual structural damage remains even after annealing at 800 °C for 60 min.
Additional Information
Copyright © 1992 American Institute of Physics (Received 11 July 1991; accepted 4 October 1991) The authors thank Dr. Y. C. Kao and Dr. K. L. Wang at UCLA for providing the as-grown CoSi2/Si( 111) samples. This work is supported in part by the Semiconductor Research Corporation under the contract No. 100-SJ-90, and by the National Science Foundation under the grant No. DMR-8811795. The authors gratefully acknowledge this support.Attached Files
Published - BAIjap92a.pdf
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Additional details
- Eprint ID
- 2659
- Resolver ID
- CaltechAUTHORS:BAIjap92a
- 100-SJ-90
- Semiconductor Research Corporation
- DMR-8811795
- NSF
- Created
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2006-04-14Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field