Radiation damage in ReSi2 by a MeV 4He beam
Abstract
Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature.
Additional Information
Copyright © 1990 American Institute of Physics (Received 17 May 1990; accepted 16 August 1990) This letter is based upon work supported in part by the Semiconductor Research Corporation under contract No. 100-SJ-89 and by the National Science Foundation under grant No. DMR-8811795 at Caltech, by the US Army Research Office and the National Science Foundation through grant No. ECS-8514842 at Colorado State University and by the National Aeronautics and Space Administration through a Small Business Innovation Research contract with the Colorado Research Development Corporation. The authors gratefully acknowledge this support.Files
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