Published October 18, 2004
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Journal Article
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High-Q ring resonators in thin silicon-on-insulator
Chicago
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Abstract
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding. The optimal waveguide designs were calculated, and the waveguide losses were analyzed. These high-Q resonators are expected to lead to interesting devices for telecommunication filters and sources as well as optical refractive index sensing.
Additional Information
©2004 American Institute of Physics (Received 2 February 2004; accepted 11 June 2004) Funding from DARPA supporting this effort under Contract No. NAV N000421-02-D-3223 DO0001 is gratefully acknowledged. The authors also wish to thank Dow Corning for providing the electron beam resist and SiGen for supplying SOI wafers.Files
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2006-01-09Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field