A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
Abstract
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.
Additional Information
© Copyright 2008 IEEE. Reprinted with permission. Manuscript received April 12, 2008; revised June 19, 2008. Current version published December 10, 2008. The authors would like to thank M. Johnson, V. Boyapati, C. Huynh, J. Kim, F. Carr, F. Jarrar, A. Kral, A. Mellati, J. Mehta, S. Martin, H. Wu, T. Wisler, S. Mezouari, D. Kang, T. Trinh, K. Kong, J. Huynh, D. Qiao, D. Hartman, I. Vitomirov, R. Chen, F. Roux, and M. Damgaard.Attached Files
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- 12931
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- CaltechAUTHORS:AOKieeejscc08
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2009-01-09Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field