High-pressure electrical behavior and equation of state of magnesium oxide from shock wave measurements
- Creators
- Ahrens, Thomas J.
Abstract
A decrease in resistivity of MgO from >10^(5) to ~10^(3)Ω·cm is observed when thin single crystals are shocked in the [001] direction to 920±70 kbar. This effect may be produced by several electronic processes, or by ionic transport in which the effective O= or Mg++ diffusion constants are increased by perhaps a factor of 10^39 from those calculated at high pressure (according to Zener strain-energy model). Voltages are observed during passage of various-strength (70 to 936 kbar) shock fronts through the specimen. These voltages approximately scale as the inverse of the specimen thickness and may arise from net volume polarization (~0.2 to ~9 V/cm). Some Hugoniot data to 660 kbar (including measurement of elastic-shock amplitude varying from 35 to 89 kbar) are presented.
Additional Information
©1966 The American Institute of Physics. Received 1 December 1965; revised 17 January 1966. This research was solely supported by the Institute Research and Development funds of Stanford Research Institute. It is a pleasure to thank my colleagues, Dr. D.G. Doran, Dr. W. Murri, Dr. G.R. Fowles, Dr. R.K. Linde, Dr. Y. Syono, and Dr. S. Gill, as well as Dr. M.O. Davies of the Lewis Research Center, for significant contributions and helpful discussion. The assistance of M. Ruderman in carrying out the Hugoniot measurements is appreciated.Files
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Additional details
- Eprint ID
- 5418
- Resolver ID
- CaltechAUTHORS:AHRjap66
- Created
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2006-10-17Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field