Published November 3, 1997
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Journal Article
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In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy
Chicago
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Abstract
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of < 500 µs and surface composition determination in GexSi1 – x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4.5 core loss.
Additional Information
© 1997 American Institute of Physics (Received 15 July 1997; accepted 9 September 1997) This work was supported by the National Science Foundation (Grant Nos. DMR-9202587 and DMR-9503210).Attached Files
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Additional details
- Eprint ID
- 1206
- Resolver ID
- CaltechAUTHORS:AHNapl97
- NSF
- DMR-9202587
- NSF
- DMR-9503210
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2006-01-04Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field