Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se^(-/2-), n-GaAs/CH₃CN-ferrocene^(+/0), and n-GaAs/Au interfaces
Abstract
Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se^(-/2-) and nonaqueous CH₃CN-ferrocene^(+/0)-LiC1O₄ electrolytes. The n-GaAs/KOH-Se^(-/2-) system initially exhibited poor junction behavior, but chemisorption of Ruᴵᴵᴵ, Rhᴵᴵᴵ, Irᴵᴵᴵ, Coᴵᴵᴵ, or Osᴵᴵᴵ ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se²⁻ oxidation at p-GaAs, n⁺-GaAs, and In₂O₃ electrode surfaces. The n-GaAs/CH₃CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.
Additional Information
© 1988 American Chemical Society. We thank Dr. S. Chu of Southern Methodist University for generously supplying polycrystalline material. We also thank the National Science Foundation (Grant CHE-8312692) for partial support of this work and the Department of Energy, Office of Basic Energy Sciences, for continuing support of these studies.Additional details
- Eprint ID
- 120984
- Resolver ID
- CaltechAUTHORS:20230418-318445000.20
- CHE-8312692
- NSF
- Department of Energy (DOE)
- Created
-
2023-04-24Created from EPrint's datestamp field
- Updated
-
2023-04-24Created from EPrint's last_modified field