Cyclic voltammetry at semiconductor photoelectrodes. 1. Ideal surface-attached redox couples with ideal semiconductor behavior
Abstract
Working curves for the cyclic voltammetric behavior of semiconductor electrodes have been generated by consideration of a model electrode circuit. The circuit consists of an ideal photodiode in series with a metal electrode. The electroactive material is considered to be an ideally behaving, surface attached redox couple. The solution for the diode/electrode current-voltage characteristic has been solved numerically. Simulations have been performed under varying levels of illumination and for different values of the diode barrier height, the voltage scan rate, and the amount of electroactive material. Chopped scans have also been simulated, where the forward scan is in the light and the reverse scan is in the dark. Emphasis has been placed on modeling cyclic voltammetric data under common experimental conditions, in order to provide a basis for comparison with experiments in the literature.
Additional Information
© 1988 American Chemical Society. We acknowledge the Department of Energy, Office of Basic Energy Sciences, Grant DE-FG03-84ER13222, for support of this work. We also acknowledge helpful discussions with Gail N. Ryba and Professor Hans Andersen of Stanford University, Dr. Steven Feldberg of Brookhaven National Laboratory, and Professor Carl Koval of the University of Colorado. N.S.L. also acknowledges support as a A. P. Sloan Fellow and a Dreyfus Teacher-Scholar.Additional details
- Eprint ID
- 120981
- Resolver ID
- CaltechAUTHORS:20230418-318430000.17
- DE-FG03-84ER13222
- Department of Energy (DOE)
- Alfred P. Sloan Foundation
- Camille and Henry Dreyfus Foundation
- Created
-
2023-04-24Created from EPrint's datestamp field
- Updated
-
2023-04-24Created from EPrint's last_modified field