Measurement of the activation barrier for carrier transport at n-gallium arsenide semiconductor/liquid junctions
- Creators
- Casagrande, Louis G.
-
Lewis, Nathan S.
Abstract
The mechanism of carrier transport at semiconductor/liquid interfaces is an important and controversial topic in photoelectrochemistry. Of particular concern is the transport kinetics for interfaces whose open-circuit voltage, V_(OC), is constant over some range of solution redox potential. Fermi level pinning has been postulated to apply to n-GaAs, p-GaAs, and p-InP interfaces in both aqueous and nonaqueous solvents. However, direct identification of the various recombination mechanisms has been acknowledged to be difficult, and to date, few experimental techniques have been reported which allow correlation of the key photostationary state observable, the open circuit voltage, to the transport mechanism of these interfaces. We report here measurements of the temperature dependence of the open-circuit voltage for the n-GaAs semiconductor/liquid junction system
Additional Information
© 1985 American Chemical Society. We acknowledge helpful discussions with W. Spicer, R. Bube, A. Fahrenbruch, and R. Swanson regarding this research. Funding for this work was provided by the Department of Energy, Office of Basic Energy Sciences. We also thank C.L.R. Lewis of Varían Associates for a generous supply of epitaxial n-GaAs samples, and N.S.L. acknowledges support for the Exxon Education Foundation and Monsanto Corp. under the Presidential Young Investigator Program.Additional details
- Alternative title
- Measurement of the Activation Barrier for Carrier Transport at n-GaAs Semiconductor/Liquid Junctions
- Eprint ID
- 120938
- Resolver ID
- CaltechAUTHORS:20230417-377821000.28
- Department of Energy (DOE)
- Exxon Education Foundation
- Monsanto Corporation
- Created
-
2023-04-21Created from EPrint's datestamp field
- Updated
-
2023-04-21Created from EPrint's last_modified field