Cyclic Voltammetry of Semiconductor Photoelectrodes III: A Comparison of Experiment and Theory for n-Si and p-Si Electrodes
Abstract
Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH₃OH−CoCp₂^(+/0) contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.
Additional Information
© 1998 American Chemical Society. We acknowledge the Petroleum Research Foundation and the Department of Energy, Office of Basic Energy Sciences, DE-FG-03-88ER13932LN, for support of this work. M. Lieberman also acknowledges the National Science Foundation, Grant CHE-9403134, for a postdoctoral fellowship. We are also grateful to Dr. S. Feldberg of Brookhaven National Laboratory for numerous discussions regarding simulation procedures and methodology for these systems.Additional details
- Eprint ID
- 120790
- Resolver ID
- CaltechAUTHORS:20230412-312152000.17
- Petroleum Research Foundation
- Department of Energy (DOE)
- DE-FG-03-88ER13932LN
- NSF Graduate Research Fellowship
- CHE-9403134
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2023-04-14Created from EPrint's datestamp field
- Updated
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2023-04-14Created from EPrint's last_modified field