Published July 1992
| public
Journal Article
Selective nucleation of silicon clusters in CVD
- Creators
- Shi, Frank G.
-
Seinfeld, John H.
Abstract
A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH₂Cl₂/HCl/H₂.
Additional Information
The authors are grateful for useful discussions with Dr. T. Yonehara.Additional details
- Eprint ID
- 119592
- Resolver ID
- CaltechAUTHORS:20230301-144673600.3
- Created
-
2023-03-02Created from EPrint's datestamp field
- Updated
-
2023-03-02Created from EPrint's last_modified field