Published June 1977
| public
Journal Article
Transients of the photoluminescence from EHD in doped and undoped Ge
Chicago
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Abstract
The decay characteristics of luminescence from EHD in pure Ge and Ge doped in the range of 10¹⁵ cm⁻³ are reported for 4.2 K and 2 K. These characteristics are found to be in agreement with calculations based on a model which includes multidrop effects and exciton diffusion
Additional Information
Work supported in part by Office of Naval Research. Received: 03 December 1976. Published: 28 October 2007. Issue Date: June 1977.Additional details
- Eprint ID
- 117250
- Resolver ID
- CaltechAUTHORS:20221004-680171300.29
- Office of Naval Research (ONR)
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2022-10-12Created from EPrint's datestamp field
- Updated
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2022-10-12Created from EPrint's last_modified field