Published June 1977
| public
Journal Article
Transients of the photoluminescence from EHD in doped and undoped Ge
Abstract
The decay characteristics of luminescence from EHD in pure Ge and Ge doped in the range of 10¹⁵ cm⁻³ are reported for 4.2 K and 2 K. These characteristics are found to be in agreement with calculations based on a model which includes multidrop effects and exciton diffusion
Additional Information
Work supported in part by Office of Naval Research. Received: 03 December 1976. Published: 28 October 2007. Issue Date: June 1977.Additional details
- Eprint ID
- 117250
- Resolver ID
- CaltechAUTHORS:20221004-680171300.29
- Office of Naval Research (ONR)
- Created
-
2022-10-12Created from EPrint's datestamp field
- Updated
-
2022-10-12Created from EPrint's last_modified field