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Published April 25, 2022 | Published + Accepted Version
Journal Article Open

Development of hard masks for reactive ion beam angled etching of diamond

Abstract

Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.

Additional Information

© 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. Received 12 Jan 2022; revised 23 Feb 2022; accepted 24 Feb 2022; published 12 Apr 2022. C.C. contributed to this work prior to joining IMRE. B.M. contributed to this work prior to joining AWS. We wish to thank H. A. Atikian and M. J. Burek for stimulating discussions, and E. Cornell for help with device fabrication and characterization. This work was supported by NSF (EFRI ACQUIRE Grant No. 5710004174, CQIS grant No. ECCS-1810233, STC grant No. DMR-1231319), ONR (MURI on Quantum Optomechanics, Grant No. N00014-15-1-2761 and N00014-20-1-2425) and DOE (HEADS-QON Grant DE-SC0020376). C. C. acknowledges support from the National Science Scholarship of the Agency for Science, Technology and Research (A*STAR), Singapore. This work was performed in part at the Harvard University Center for Nanoscale Systems (CNS); a member of the National Nanotechnology Coordinated Infrastructure Network (NNCI), which is supported by the National Science Foundation under NSF award no. ECCS-2025158. CNS is part of Harvard University. Funding: National Science Foundation (CQIS ECCS-1810233, EFRI ACQUIRE 5710004174, NNCI ECCS-2025158, STC DMR-1231319); Office of Naval Research (MURI N00014-15-1-2761, MURI N00014-20-1-2425); U.S. Department of Energy (HEADS-QON DE-SC0020376). Data availability. Data underlying the results presented in this paper may be obtained from the authors upon reasonable request. The authors declare no conflicts of interest.

Attached Files

Published - oe-30-9-14189.pdf

Accepted Version - 2201.06416.pdf

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Additional details

Created:
August 22, 2023
Modified:
October 23, 2023