Published June 1992
| Published
Journal Article
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Epitaxial C₆₀ Film on Si(111) by XPS
Abstract
High resolution XPS measurements of the C 1s, including energy losses, and the valence band regions are presented for a high quality epitaxial film (average grain size ~70 nm) of C₆₀ on a Si (111) substrate. Similar films have also been characterized with x-ray diffraction and transmission electron microscopy.
Additional Information
© 1992 American Vacuum Society. This work was supported by a grant from the Caltech President's Fund.Attached Files
Published - 1.1247645.pdf
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Additional details
- Alternative title
- Epitaxial C60 Film on Si(111) by XPS
- Eprint ID
- 113801
- Resolver ID
- CaltechAUTHORS:20220308-454058000
- Caltech President's Fund
- Created
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2022-03-09Created from EPrint's datestamp field
- Updated
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2022-03-09Created from EPrint's last_modified field