Published May 2021
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InGaAsP/InP Membrane Gain Sections for III-V/SiN_x Heterogeneous Photonic Integration
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Abstract
We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections (λ = 1550 nm) suitable for heterogeneous integration with SiN_x PICs. The structures exhibit desired electrical performance and support lasing.
Additional Information
© 2021 The Author(s). DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited. This material is based upon work supported by the Defense Advanced Research Projects Agency (DARPA) under Air Force Contract No. FA8702-15-D-0001. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of DARPA. Delivered to the U.S. Government with Unlimited Rights, as defined in DFARS Part 252.227-7013 or 7014 (Feb 2014). Notwithstanding any copyright notice, U.S. Government rights in this work are defined by DFARS 252.227-7013 or DFARS 252.227-7014 as detailed above. Use of this work other than as specifically authorized by the U.S. Government may violate any copyrights that exist in this work.Attached Files
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Additional details
- Alternative title
- InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration
- Eprint ID
- 112759
- Resolver ID
- CaltechAUTHORS:20220106-508565300
- Defense Advanced Research Projects Agency (DARPA)
- Air Force Office of Scientific Research (AFOSR)
- FA8702-15-D-0001
- Created
-
2022-01-09Created from EPrint's datestamp field
- Updated
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2022-01-09Created from EPrint's last_modified field