Published May 2021
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Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator
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Abstract
A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundry- fabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz² Hz⁻¹ and yielding instantaneous linewidth of 1.2 Hz.
Additional Information
© 2021 The Author(s). This work is supported by the Defense Advanced Research Projects Agency, DARPA (HR0011-15-C-055, FA9453-19-C-0029) and Anello Photonics.Attached Files
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Additional details
- Eprint ID
- 112764
- Resolver ID
- CaltechAUTHORS:20220106-104652400
- Defense Advanced Research Projects Agency (DARPA)
- HR0011-15-C-055
- Defense Advanced Research Projects Agency (DARPA)
- FA9453-19-C-0029
- Anello Photonics
- Created
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2022-01-09Created from EPrint's datestamp field
- Updated
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2022-01-09Created from EPrint's last_modified field