Published June 2021
| public
Book Section - Chapter
ZnS_xSe_(1–x) Carrier-Selective Contacts for Silicon Photovoltaics
Chicago
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Abstract
The wide bandgaps and superior conductivity of ZnS_xSe_(1–x) semiconductors to amorphous Si suggest an alternative carrier-selective contact in silicon heterojunction solar cells. Electron-selective ZnS_xSe_(1–x) front contacts on p-type c-Si solar cells are explored by simulating in Sentaurus TCAD a large design parameter space informed by experimentally determined optoelectronic properties. Comparable performance to experimental and simulated p-SHJ reference devices is shown, with a champion simulated device efficiency of 20.8%.
Additional Information
© 2021 IEEE. The information, data, or work presented herein was funded in part by the U.S. Department of Energy through the Bay Area Photovoltaic Consortium under Award Number DE-EE0004946 and additionally through the Energy Efficiency and Renewable Energy Program, under Award Number DEEE0006335; by the National Science Foundation (NSF) Graduate Research Fellowship under Grant No. 1144469; and in part by the NSF and the Department of Energy (DOE) under NSF CA No. EEC-1041895.Additional details
- Alternative title
- ZnSxSe1–x Carrier-Selective Contacts for Silicon Photovoltaics
- Eprint ID
- 111809
- Resolver ID
- CaltechAUTHORS:20211109-223403199
- Department of Energy (DOE)
- DE-EE0004946
- Department of Energy (DOE)
- DE-EE0006335
- NSF Graduate Research Fellowship
- DGE-1144469
- NSF
- EEC-1041895
- Created
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2021-11-11Created from EPrint's datestamp field
- Updated
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2021-11-11Created from EPrint's last_modified field