An ultra-fast frequency shift mechanism for high data-rate sub-THz wireless communications in CMOS
Abstract
Various approaches are being considered to address the demand for high-throughput (Gb/s) point-to-point wireless communication systems in 5G infrastructure and sub-THz transceivers. Two fully integrated CMOS wireless transmitters with frequency shift keying (FSK) modulation were prototyped in a standard 55 nm SiGe process. Benefiting from the coupled oscillator loop system, the single channel data rate up to 10 Gb/s wireless link (limited by measurement equipment) was demonstrated. The proposed coupled oscillator loop system enables instantaneous frequency shift in an ideal situation, which resolves overshoots/undershoots and long frequency settling issues in the conventional varactor-based LC voltage controlled oscillator. The measured single channel data rate is around 5× higher than the previously published CMOS/BiCMOS FSK transmitter.
Additional Information
© 2021 The authors. Published under an exclusive license by AIP Publishing. Submitted: 29 April 2021. Accepted: 3 June 2021. Published Online: 17 June 2021. This paper is part of the APL Special Collection on Advances in 5G Physics, Materials, and Devices. DATA AVAILABILITY. Data sharing is not applicable to this article as no new data were created or analyzed in this study. The performance of the chips was measured, and resulting images were saved from the equipment like oscilloscope and spectrum analyzer.Attached Files
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Additional details
- Eprint ID
- 109596
- Resolver ID
- CaltechAUTHORS:20210626-183437398
- Created
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2021-06-28Created from EPrint's datestamp field
- Updated
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2023-10-03Created from EPrint's last_modified field