Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates
Abstract
We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. We observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO₂) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.
Additional Information
© 2021 American Physical Society. (Received 12 October 2020; revised 4 December 2020; accepted 9 December 2020; published 20 January 2021) This work is supported by the "Photonics at Thermodynamic Limits" Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0019140. We thank Phillip Jahelka for the discussion and Komron Shayegan and Arun Nagpal for feedback on the paper.Attached Files
Published - PhysRevApplied.15.014036.pdf
Supplemental Material - SI-2.pdf
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Additional details
- Eprint ID
- 107627
- Resolver ID
- CaltechAUTHORS:20210121-101410749
- DE-SC0019140
- Department of Energy (DOE)
- Created
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2021-01-21Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field