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Published 1984 | public
Book Section - Chapter

Bistable injection lasers

Abstract

Semiconductor lasers with inhomogeneous current injection have been proposed nearly twenty years ago [1] as highly compact and efficient bistable devices. Recently, we demonstrated that a semiconductor laser with a segmented contact, as shown in Fig. 1, displays bistability without pulsations. The key to the proper design of such a bistable laser is the electrical isolation between the two segments which requires that the parasitic resistance (R_p in Fig. 2) between the two contacts be as large as possible. This can be achieved by doping the top cladding layer only slightly p-type.

Additional Information

© Plenum Press, New York 1984. This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program and by the Army Research Office.

Additional details

Created:
August 19, 2023
Modified:
October 20, 2023