Perspectives on formation and properties of semiconductor interfaces
- Creators
- Bauer, R. S.
- Miles, R. H.
- McGill, T. C.
- Others:
- Le Lay, Guy
- Derrien, Jacques
- Boccara, Nino
Abstract
Recent progress in experimentally and theoretically understanding interfaces at the atomic level suggest that ultimate electronic systems may one day be fabricated on a single integrated chip. If such elements as Si VLSI processors, GaAs/AIAs integrated optoelectronic 10 devices, II-VI superlattice visible displays and high speed III-V processors are to be integrated, interface formation and in situ processing will be required at a level of sophistication well beyond what is available today. In this paper, we review recent developments in interface formation by both MOCVD and MBE. To illustrate the power of our diagnostic methods, the details of epitaxial interface formation on an atomic scale are reviewed for lattice matched systems (Ge/GaAs/AIAs) and epitaxial silicides (Ni/Si2/Si) as well as oxidation of silicon to form Si/SiO2 interfaces. New developments in using lattice mismatched superlattices with strained layers are discussed for CdTe/ZnTe. Additional complications of growing compound semiconductors on elemental substrates (e.g., anti-phase domains) are discussed for GaAs growth on Si(l00).
Additional Information
© Springer-Verlag Berlin Heidelberg 1987. The portions of this paper reporting results from the Xerox photoemission research would not have been possible without major collaborative contributions from H. W. Sang, Jr., A. Katnani, P. Zurcher, P. Chiaradia, and J. C. McMenamin, Jr. Perspectives on MOCVD are due to the insight and technical contributions of R. D. Burnham (Amaco). We acknowledge the exciting contributions and advice of R. L. Thornton (Xerox) on impurity-induced disordering of superlattices. The work at Caltech on strained-layer superlattices could not have progressed without the generous assistance of M. B. Johnson and C. Y. Wu. Ted Woodward (Caltech) provided stimulating discussions and shared results on resonant tunnelling device structures prior to publication. The support from the Office of Naval Research (L. R. Cooper) and DARPA (R. Reynolds, S. Roosild, and J. Murphy) is greatfully acknowledged for both its financial contribution as well as the technical perspective provided by the individuals. We are grateful to D. E. Aspnes of Bellcore for generously providing a preprint of his GaAs/Si work prior to publication.Attached Files
Published - Bauer1987_Chapter_PerspectivesOnFormationAndProp.pdf
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Additional details
- Eprint ID
- 106447
- Resolver ID
- CaltechAUTHORS:20201104-193125750
- Office of Naval Research (ONR)
- Defense Advanced Research Projects Agency (DARPA)
- Created
-
2020-11-09Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Series Name
- Springer Proceedings in Physics
- Series Volume or Issue Number
- 22