Published 1985
| public
Book Section - Chapter
Inelastic and resonant tunneling in GaAs/AlAs heterostructures
Chicago
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Abstract
We report the observation of inelastic and resonant tunneling in a study of electronic transport perpendicular to single or multiple AlAs layers sandwiched between GaAs layers. First derivatives and second derivatives of the low temperature current- voltage curves (I-V) for samples with single, 50 Å thick, AlAs layers revealed structure at both the AlAs and GaAs longitudinal optical phonon energies. These were attributed to the inelastic excitation of AlAs phonons and to a self-energy effect in the GaAs, respectively. The I-V curves for samples with two AlAs barriers of approximately the same width exhibited negative resistance regions due to resonant tunneling.
Additional Information
© Springer Science+Business Media New York 1985. The authors wish to acknowledge D. L. Smith, C. Mailhiot, R. S. Bauer, T. L. Paoli, and W. Streifer for valuable discussions and are grateful to H. Chung, R. D. Yingling, Jr., F. Endicott, M. Bernstein, M. Mosby, J. Tramontana, J. Walker, A. Alimonday, G. L. Harnagel, and R. Ritter for technical assistance. This work was supported in part by the Office of Naval Research under Contract No. N00014-82-K-0556.Additional details
- Eprint ID
- 106446
- Resolver ID
- CaltechAUTHORS:20201104-193125647
- Office of Naval Research (ONR)
- N00014-82-K-0556
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