Published 1985
| public
Book Section - Chapter
S-Like Excited States of the 78-meV Acceptor in GaAs
- Creators
- Hetzler, S. R.
- McGill, T. C.
- Hunter, A. T.
- Others:
- Chadi, James D.
- Harrison, Walter A.
Chicago
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Abstract
We report the first observation of s-like excited states of a double acceptor in a semiconductor. Measurements on two different liquid encapsulated Czochralski GaAs samples containing the 78-meV acceptor showed the first s-like excited state of this level to be split. We present a simple model which predicts the 1s¹2s¹ excited state of a double acceptor in GaAs to be split by 4.0 meV, in good agreement with our observed value of 2.6 meV.
Additional Information
© Springer Science+Business Media New York 1985. We would like to acknowledge the support from the Office of Naval Research under contract No. N00014-81-K-0305. The authors also gratefully acknowledge M. H. Young of Hughes Research Laboratories for providing the samples used in this study.Additional details
- Eprint ID
- 106309
- Resolver ID
- CaltechAUTHORS:20201027-183158985
- Office of Naval Research (ONR)
- N00014-81-K-0305
- Created
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2020-10-29Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field