CACTUS: a depleted monolithic active timing sensor using a CMOS radiation hard technology
Abstract
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.
Additional Information
© 2020 IOP Publishing Ltd and Sissa Medialab. Received 12 March 2020; Accepted 10 May 2020; Published 8 June 2020. We acknowledge the technical and financial support of IRFU-CEA for the design, characterization and tests done in lab for the CACTUS sensor. The experiments performed at the FTBF were supported by the U.S. Department of Energy. We wish to thank the Fermilab Test Beam Facility personnel for the continuous support they provide us. The testbeam measurements were performed using the resources of the Fermi National Accelerator Laboratory, a U.S. Department of Energy, Office of Science, HEP User Facility. Fermilab is managed by Fermi Research Alliance, LLC (FRA), acting under Contract No. DE-AC02-07CH11359. This work has also been supported by funding from the California Institute of Technology High Energy Physics under Contract DE-SC0011925 with the U.S. Department of Energy.Attached Files
Submitted - 2003.04102.pdf
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Additional details
- Alternative title
- CACTUS: towards a depleted monolithic active timing sensor using a CMOS radiation hard technology
- Eprint ID
- 103788
- Resolver ID
- CaltechAUTHORS:20200609-081506712
- Department of Energy (DOE)
- DE-AC02-07CH11359
- Department of Energy (DOE)
- DE-SC0011925
- Created
-
2020-06-09Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Caltech groups
- CMS@Caltech