Residual stress analysis of thin film photovoltaic cells subjected to massive micro-particle impact
Abstract
Residual stresses play a crucial role in both light-electricity conversion performances and the lifespan of photovoltaic (PV) cells. In this paper, the residual stress of triple junction cells (i.e. GaInP/GaInAs/Ge) induced by laser-driven massive micro-particle impact is analyzed with a novel method based on backscattering Raman spectroscopy. The impact process, which induces damage to the PV cells and brings the residual stress, is also investigated by optical microscopy (OM) and Scanning Electron Microscopy (SEM). The results show that the PV cells would exhibit various damage patterns. At the same time, strong residual stresses up to hundreds of MPa introduced in the damaged PV cells after impact have been analysis, providing an effective perspective to better understand the damage behavior and residual stress features of PV cells during their service life.
Additional Information
© 2020 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Submitted 02 Dec 2019; Accepted 25 Mar 2020; First published 02 Apr 2020. This work was supported by National Natural Science Foundation of China (Grant No. 11572327, 11672315, and 11772347), Science Challenge Project (Grant No. TZ2018001), and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA17030100, XDA17030200, XDB22040302 and XDB22040303). Data availability: The authors declare that the data supporting the findings of this study are available within the paper. The authors declare no competing interests.Attached Files
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Additional details
- PMCID
- PMC9122580
- Eprint ID
- 103385
- Resolver ID
- CaltechAUTHORS:20200521-153624950
- 11572327
- National Natural Science Foundation of China
- 11672315
- National Natural Science Foundation of China
- 11772347
- National Natural Science Foundation of China
- TZ2018001
- Science Challenge Project
- XDA17030100
- Chinese Academy of Sciences
- XDA17030200
- Chinese Academy of Sciences
- XDB22040302
- Chinese Academy of Sciences
- XDB22040303
- Chinese Academy of Sciences
- Created
-
2020-05-21Created from EPrint's datestamp field
- Updated
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2022-06-14Created from EPrint's last_modified field